Performing data restore operations in memory

ABSTRACT

The present disclosure includes apparatuses and methods for performing data restore operations in memory. An embodiment includes a memory, and a controller configured to perform a data restore operation on data stored in the memory using a first table and a second table stored in the controller, wherein the first table includes a current mapping of the data stored in the memory that is based on a previous assessment of previous error rates associated with the data stored in the memory, and the second table includes a new mapping of the data stored in the memory that is based on a current assessment of current error rates associated with the data stored in the memory.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmethods, and more particularly, to performing data restore operations inmemory.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits and/or external removable devices in computers orother electronic devices. There are many different types of memoryincluding volatile and non-volatile memory. Volatile memory can requirepower to maintain its data and can include random-access memory (RAM),dynamic random access memory (DRAM), and synchronous dynamic randomaccess memory (SDRAM), among others. Non-volatile memory can providepersistent data by retaining stored data when not powered and caninclude NAND flash memory, NOR flash memory, read only memory (ROM), andresistance variable memory such as phase change random access memory(PCRAM), 3D Phase Change Material and Switch (PCMS), resistive randomaccess memory (RRAM), magnetic random access memory (MRAM), andprogrammable conductive memory, among others.

Memory devices can be combined together to form a solid state drive(SSD). An SSD can include non-volatile memory (e.g., 3D PCMS, NAND flashmemory and/or NOR flash memory), and/or can include volatile memory(e.g., DRAM and/or SRAM), among various other types of non-volatile andvolatile memory. Flash memory devices can include memory cells storingdata in a charge storage structure such as a floating gate, forinstance, and may be utilized as non-volatile memory for a wide range ofelectronic applications. Flash memory devices typically use aone-transistor memory cell that allows for high memory densities, highreliability, and low power consumption.

Memory cells in an array architecture can be programmed to a target(e.g., desired) data state. For example, a single level cell (SLC) canbe programmed to a targeted one of two different data states, which canbe represented by the binary units 1 or 0. Some memory cells can beprogrammed to a targeted one of more than two data states (e.g., 1111,0111, 0011, 1011, 1001, 0001, 0101, 1101, 1100, 0100, 0000, 1000, 1010,0010, 0110, and 1110). Such cells may be referred to as multi statememory cells, multiunit cells, or multilevel cells (MLCs). MLCs canprovide higher density memories without increasing the number of memorycells since each cell can represent more than one digit (e.g., more thanone bit).

Various internal and/or external mechanisms, however, may cause an errorto occur when the state of a memory cell is sensed (e.g., read). Forexample, such mechanisms may cause memory cells to be sensed to be in astate other than the target state (e.g., a different data state than thedata state to which the cell was programmed). This may reduce thequality of the data stored in the memory, which may decrease thelifetime of the memory and/or cause the memory to fail, if correctiveactions are not taken.

Error detection and correction schemes such as, for instance, errorcorrection code (ECC) schemes and/or redundant array independent disc(RAID) schemes, can be utilized to correct such errors. However, thecapabilities of such schemes may be limited. For instance, such schemesmay only be capable of detecting and correcting a certain (e.g., finite)quantity (e.g., number or distribution) of erroneous data; if this limitis exceeded, the erroneous data may not be correctable, and may becomecorrupted and/or lost.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a block diagram of an apparatus in the form of amemory device in accordance with an embodiment of the presentdisclosure.

FIG. 2 illustrates a block diagram of an apparatus in the form of amemory device in accordance with an embodiment of the presentdisclosure.

FIG. 3 illustrates a block diagram of an apparatus in the form of acomputing system including at least one memory system in accordance withan embodiment of the present disclosure.

FIGS. 4A-4B illustrate examples of tables used to perform data restoreoperations in accordance with an embodiment of the present disclosure.

FIG. 5 illustrates an example of a table used to perform data restoreoperations in accordance with an embodiment of the present disclosure.

FIG. 6 illustrates an example of a table used in operation of memory inaccordance with an embodiment of the present disclosure.

FIG. 7 illustrates a method for operating memory in accordance with anembodiment of the present disclosure.

FIG. 8 illustrates a method for operating memory in accordance with anembodiment of the present disclosure.

FIG. 9 illustrates a method for operating memory in accordance with anembodiment of the present disclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods for performingdata restore operations in memory. An embodiment includes a memory, anda controller configured to perform a data restore operation on datastored in the memory using a first table and a second table stored inthe controller, wherein the first table includes a current mapping ofthe data stored in the memory that is based on a previous assessment ofprevious error rates associated with the data stored in the memory, andthe second table includes a new mapping of the data stored in the memorythat is based on a current assessment of current error rates associatedwith the data stored in the memory.

Embodiments of the present disclosure can operate to continuouslyperform data restore operations on data stored in memory by continuouslyreevaluating the memory and reprogramming (e.g., rewriting) the data sothat the data is always stored in the best available memory (e.g., thememory having the lowest error rate associated therewith). This canlower the overall error rate associated with the data stored in thememory, thereby ensuring that the error detection and correctioncapabilities (e.g. limits) of error detection and correction schemes(e.g., ECC and/or RAID schemes) utilized by the memory are not exceeded.As such, performing data restore operations in accordance with thepresent disclosure can increase the quality of the data stored in thememory, which may increase the lifetime of the memory and/or prevent thememory from failing.

Embodiments of the present disclosure can also ensure efficient use ofthe memory's resources (e.g., power, speed, and/or storage space). Forexample, otherwise unrelated sense operations performed on the memorycan be combined into a single operation (e.g., a read-verify operation)for both error assessment (e.g., collating error distribution) and datarestoration (e.g., retrieving data to be migrated). In contrast,previous approaches may split such operations into two separate senseoperations to be performed on the memory, which may use additionalstorage space (e.g. overhead) and result in additional wear (e.g., readdisturb) on the memory.

Further, the rate at which data restore operations in accordance withthe present disclosure are performed can be adjustable, which in turncan result in a corresponding increase or decrease in the storage spaceneeded for the data restore operations (e.g., an increased speed mayresult in a corresponding increase in overhead, and vice versa). Assuch, data restore operations in accordance with the present disclosurecan be tailored to particular system requirements, such as, forinstance, quality of service requirements.

Further, data restore operations in accordance with the presentdisclosure can operate in the background of the memory, independent ofclient (e.g., user and/or host) accesses. This may enhance theperformance (e.g., quality of service) of the memory by reducing thechance that a client access will incur latency-reducing, time consumingdata correction and/or restore operations. In contrast, previousapproaches may rely on client accesses for error detection and/orcorrection, which may result in increased latency.

Further, data restore operations in accordance with the presentdisclosure may be fine grained. For example, if a single unreliableportion (e.g., sector) of the memory requires extensive correctionand/or restoration, such as, for instance, a RAID rebuild, this memoryportion may be restored entirely, thereby reducing excess clientlatency.

Further, data restore operations in accordance with the presentdisclosure can manifest updated memory mappings to reflect newlyassessed memory health. For example, data restore operations inaccordance with the present disclosure can continuously assess thefidelity of the memory, and adapt the data storage in the memory toreflect these assessments. In contrast, previous approaches may usetime-based (e.g., zero-time based) mapping and/or data storageassessments, and/or make irreversible mapping and/or storage decisions.

Further, performing data restore operations in accordance with thepresent disclosure can satisfy a periodic memory refresh useful for 3DPhase Change Material and Switch (PCMS) memory. For instance, datarestore operations in accordance with the present disclosure canmaintain the plasticity of such memory, and therefore lower its errorrates, by continually rewriting its stored data as part of the restoreoperation.

Further, in the context of flash memory, data restore operations inaccordance with the present disclosure can satisfy the function ofcontinuously evaluating and managing (e.g. tuning) trim settings, suchas, for instance, the calibration of sense amplifiers, of the memory toreduce (e.g., minimize) errors during sense operations. In contrast,previously approaches may rely on client accesses for tuning trimsettings, thereby incurring increased latency.

As used herein, “a” or “an” can refer to one or more of something, and“a plurality of” can refer to more than one of such things. For example,a memory cell can refer to one or more memory cells, and a plurality ofmemory cells can refer to two or more memory cells. Additionally, thedesignators “E” and “N”, as used herein, particularly with respect toreference numerals in the drawings, indicates that one or more of theparticular feature so designated can be included with an embodiment ofthe present disclosure.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits.

FIG. 1 illustrates a block diagram of an apparatus in the form of amemory device in accordance with an embodiment of the presentdisclosure. As used herein, an “apparatus” can refer to, but is notlimited to, any of a variety of structures or combinations ofstructures, such as a circuit or circuitry, a die or dice, a module ormodules, a device or devices, or a system or systems, for example.

The memory device can include three-dimensional memory entities, such asthe three-dimensional memory entity 137 illustrated in FIG. 1. Thethree-dimensional memory entity can include a plurality oftwo-dimensional memory entities 135-1, 135-2 . . . , 135-E. Thetwo-dimensional memory entities 135 can be arrays of memory elementssuch as memory cells, although for clarity only one respective memoryelement 138-1, 138-2 . . . , 138-E is illustrated for eachtwo-dimensional memory entity 135. The two-dimensional memory entities135 can be physical memory entities such as dice or chips that includean array of memory elements. The two-dimensional memory entities arereferred to as being two-dimensional because they are of a lesserdimension than the three-dimensional memory entity 137. Although thetwo-dimensional memory entities 135 are three-dimensional physicalobjects, they are referred to as being two-dimensional because a groupof two-dimensional memory entities 135 can form a memory entity of ahigher dimension, which is referred to as a three-dimensional memoryentity 137. The two-dimensional memory entities may include more thanone planar array of memory cells.

The two-dimensional memory entities 135 are referred to as beingtwo-dimensional because they are of a greater dimension than a memoryelement. The two-dimensional memory entities 135 include a plurality ofmemory elements arranged in at least two physical dimensions (e.g., atleast one memory array). The memory elements individually can bereferred to as one-dimensional memory elements (again, even though theyexist as three-dimensional physical objects). A grouping of a pluralityof three-dimensional memory elements 137 can be referred to as afour-dimensional memory element (not specifically illustrated in FIG.1). A grouping of a plurality of four-dimensional memory elements can bereferred to as a five-dimensional memory element, etc.

Although not specifically illustrated in FIG. 1, the memory device canbe coupled to a controller, such as, for instance controller 308 furtherdescribed herein in connection with FIG. 3. Controller 308 can performdata restore operations, such as, for instance, data scrubbing and/ormigration operations, on data stored in the memory device, as will befurther described herein.

As shown in FIG. 1, the memory device can have a first resolution 139and a second resolution 141 associated therewith. The first resolution139 can be referred to as a page of data. In some embodiments, the firstresolution 139 can include a respective memory element 138-1, 138-2 . .. , 138-E from each two-dimensional memory entity 135-1, 135-2 . . . ,135-E contained within a selected three-dimensional memory entity 137.

FIG. 1 also includes an illustration of a respective example of thesecond resolution 141-1, 141-2 . . . , 141-E for each of thetwo-dimensional memory elements 135. The second resolution 141 can be aportion of a two-dimensional memory entity 135. For example, the secondresolution 141-1 illustrated in association with the two-dimensionalmemory entity 135-1 is a portion thereof. Although the second resolution141 is illustrated as being a quarter of the two-dimensional memoryentity 135, embodiments are not limited to any particular portion.

Collectively, the portions of the two-dimensional memory entities 135corresponding to the second resolution 141 make up a portion 143 of thethree-dimensional memory entity 137. For example, in the case of 3D PCMSmemory, the two-dimensional memory entities 135 can be referred to astiles, the three dimensional memory entities 137 can be referred to asslices, the portion 143 of the three-dimensional memory entity 137 canbe referred to as a parcel, and the memory elements 138 can be referredto as bits. Further, a plurality of pages of data can form a sector. Forinstance, a sector can be a logical construction comprising an arbitrarygroup of pages (e.g., the pages of data that form a sector need not beadjacent within a slice, and/or may be located on different slices). Asector may be, and/or refer to, a unit of data that is accessible to auser (e.g., a user of host 302).

The memory apparatus may include spare memory entities such as sparetwo-dimensional memory entities 135 and/or three-dimensional memoryentities 137 (e.g., spare slices and/or spare parcels). As anon-limiting example, 1/16 of the slices on a memory die can be reservedas spares. Such a spare memory entity can include one or more pages ofthe memory that are not allocated to any sector of data. These sparememory entities can be used as substitutes for other memory entitiesthat are identified as being error-prone as part of an error managementand/or data restoration process, as will be further described herein.

FIG. 2 illustrates a block diagram of an apparatus in the form of amemory device 210 in accordance with an embodiment of the presentdisclosure. In the embodiment illustrated in FIG. 2, the memory device210 is a 3D Phase Change Material and Switch (PCMS) memory device. A 3DPCMS memory device is an example of a multidimensional memory device.

A 3D PCMS device can include memory elements having a “stack” structure.A memory element can comprise a switch element and a storage element(e.g., a switch element coupled in series with a storage element). Theswitch element can be a diode, field effect transistor (FET), a bipolarjunction transistor (BJT), an ovonic memory switch (OMS), or an ovonicthreshold switch (OTS), among others. In an embodiment, the memoryelement can comprise a memory material that can serve as both thestorage element and the memory element, and which may be referred toherein as a switch and storage material (SSM). An SSM may comprise achalcogenide alloy; however, embodiments are not so limited.

In an embodiment, the switch element and storage element associated withthe respective memory cells can be series coupled two-terminal devices.For instance, the switch element can be a two-terminal OTS (e.g., achalcogenide alloy formed between a pair of electrodes), and the storageelement can be a two-terminal phase change storage element (e.g., aPhase Change Material (PCM) formed between a pair of electrodes). Amemory cell including an OTS in series with a PCM can be referred to asa PCMS memory cell. In an embodiment, an electrode can be shared betweenthe switch element and storage element of the memory cells. Also, in anembodiment, memory cells can have top or bottom electrodes comprisingconductive lines.

The memory device 210 can include a plurality of two-dimensional memoryelements, which for the 3D PCMS memory device can be referred to astiles. The tiles can include more than one deck (e.g., such as a lowerdeck 224-1 and an upper deck 224-2 as illustrated) of memory elements inan array. The tiles can have a width 226 and a height 228, as identifiedin the figure. The tiles can be divided into sub-tiles 230-1, 230-2,230-3, 230-4. In an embodiment, the sub-tiles can be quarters of a tile.

Each memory element (not specifically illustrated) can be addressed byan access line and sense line combination. Access lines may also bereferred to as word lines or select lines. Sense lines may also bereferred to as bit lines or data lines. By way of example, a tile caninclude 2048 sense lines 218-1, 218-2 and 4096 access lines per deck.However, memory device 210 is not limited to a particular number ofaccess lines 222 and/or sense lines 218. The access lines can be coupledto access line decoders 222-1, 222-2, 222-3. The sense lines can becoupled to sense line decoders 220-1, 220-2. The access line decoders222 and the sense line decoders 220 can be coupled to a controller (notspecifically illustrated), such as, for instance controller 308 furtherdescribed herein in connection with FIG. 3.

FIG. 3 illustrates a block diagram of an apparatus in the form of acomputing system 300 including at least one memory system 304 inaccordance with an embodiment of the present disclosure. As used herein,a memory system 304, a controller 308, or a memory device 310 might alsobe separately considered an “apparatus.” The memory system 304 can be asolid state drive (SSD), for instance, and can include a host interface306, a controller 308 (e.g., a processor and/or other controlcircuitry), and one or more memory devices 310-1, . . . , 310-N (e.g.,solid state memory devices such as 3D PCMS memory devices), whichprovide a storage volume for the memory system 304.

As illustrated in FIG. 3, the controller 308 can be coupled to the hostinterface 306 and to the memory devices 310 via a plurality of channelsand can be used to transfer data between the memory system 304 and ahost 302. The interface 306 can be in the form of a standardizedinterface. For example, when the memory system 304 is used for datastorage in a computing system 300, the interface 306 can be a serialadvanced technology attachment (SATA), peripheral component interconnectexpress (PCIe), or a universal serial bus (USB), among other connectorsand interfaces. In general, however, interface 306 can provide aninterface for passing control, address, data, and other signals betweenthe memory system 304 and a host 302 having compatible receptors for theinterface 306.

Host 302 can be a host system such as a personal laptop computer, adesktop computer, a digital camera, a mobile telephone, or a memory cardreader, among various other types of hosts. Host 302 can include asystem motherboard and/or backplane and can include a number of memoryaccess devices (e.g., a number of processors).

The controller 308 can communicate with the memory devices 310 tocontrol data sense (e.g., read), program (e.g., write), and eraseoperations, among other operations. Although not specificallyillustrated, in some embodiments, the controller 308 can include adiscrete memory channel controller for each channel coupling thecontroller 308 to the memory devices 310. The controller 308 caninclude, for example, a number of components in the form of hardwareand/or firmware (e.g., one or more integrated circuits) and/or softwarefor controlling access to the number of memory devices 310 and/or forfacilitating data transfer between the host 302 and memory devices 310.

The memory devices 310 can include a number of arrays of memory elements(e.g., memory cells). For example, the memory devices 310 can be 3D PCMSmemory devices analogous to memory device 210 described in connectionwith FIG. 2, including memory elements arranged in tiles as previouslydescribed herein. However, embodiments are not limited to a particulartype of memory array or array architecture.

In operation, data can be written to and/or read from a memory device ofa memory system (e.g., memory devices 310 of system 304) as a physicalpage of data, for example. As one example, a 3D PCMS memory device maybe configured to store a particular quantity of bytes of data per page,which can be one bit from each of the quantity of tiles in a slice. Datacan be transferred to/from a host (e.g., host 302) in data segmentsreferred to as sectors (e.g., host sectors). A sector of data is alogical granularity that can be remapped to a variety of differentunderlying system granularities.

In the embodiment illustrated in FIG. 3, controller 308 can include anerror correction component 312 (e.g., an error coder such as an errorcorrection code (ECC) engine) and a data restore component 314. Errorcorrection component 312 and data restore component 314 can be discretecomponents such as an application specific integrated circuit (ASIC) orthe components may reflect functionally provided by circuitry within thecontroller 308 that does not necessarily have a discrete physical formseparate from other portions of the controller 308. Although illustratedas components within the controller 308 in FIG. 3, error correctioncomponent 312 and data restore component 314 can be external to thecontroller 308 or have a component located within the controller 308 anda component located external to the controller 308. For example, theerror correction component 312 can include an error correction codingcircuit located on the controller 308 and an error correction codingcircuit located external to the controller 308. Although variousfunctions may be described with respect to the error correctioncomponent 312 and the data restore component 314, the various functionsmay equally be said to be performed by the controller 308. Thecontroller 308 can be configured to perform data restore operations,such as, for instance, data scrubbing and/or migration operations, ondata stored in memory devices 310, among other operations.

As shown in FIG. 3, data restore component can include a first table316-1 and a second table 316-2, as illustrated in FIG. 3. Tables 316-1and 316-2 may be referred to herein as repair tables, and may begenerated by controller 308 and stored (e.g., persisted) in non-volatilememory of controller 308, as will be further described herein. One ofthe repair tables (e.g., table 316-1), which may be referred to as thecurrent repair table, may include (e.g., store) a current (e.g., active)mapping of the data stored in memory devices 310 that is based on aprevious assessment (e.g., ranking) of previous error rates associatedwith the data. The other repair table (e.g., table 316-2), which may bereferred to as the new repair table, may include a new (e.g.,subsequent) mapping of the data that is based on a current assessment ofthe current error rates associated with the data.

Mapping, as used herein, can refer to the composition of auser-accessible data unit (e.g., a sector) from its constituent memoryelements (e.g., pages and bits). For instance, the mappings in therepair tables may be logical to physical mappings of groups of data,such as, for instance, sectors or parcels of data, stored in memorydevices 310. Examples of the repair tables, and of the data mappingsincluded in the repair tables, will be further described herein (e.g.,in connection with FIGS. 4A-4B and 5).

In an embodiment, controller 308 can perform data restore operations ondata (e.g., groups of data) stored in memory devices 310 (e.g., toensure the data is being stored in the best available memory by avoidingerror-prone memory in favor of more error-resistant memory) using repairtables 316-1 and 316-2. For example, controller 308 can perform a senseoperation on memory devices 310 (e.g., to sense data stored in thememory as part of a first pass of the migration) using the current datamapping in the current repair table, and then perform a programoperation on memory devices 310 (e.g., to program the sensed data to thememory as part of a second pass of the migration) using the new datamapping in the new repair table.

For instance, the current data mapping in the current repair table maymap the data (e.g., a group of the data) to a first physical location(e.g., address) in memory devices 310, and the new data mapping in thenew repair table may map the data to a second physical location inmemory devices 310. The second physical location (e.g., the location towhich the sensed data is programmed) may be different from the firstphysical location (e.g., the location from which the data was sensed),and/or may have a lower error rate associated therewith than the firstlocation. For instance, the first physical location may be auser-accessible location (e.g., page) in the memory and the secondphysical location may be a spare location (e.g., a spare page) in thememory, or vice versa.

The previous and current error rates associated with the data stored inmemory devices 310 can be, for example, bit error rates associated witherror correction operations performed on the data. A bit error rate, asused herein, can refer to the quantity of erroneous bits correspondingto an amount of erroneous data sensed from a memory during a senseoperation divided by the total amount of data sensed during the senseoperation (e.g., the sample size).

The previous and current error rates associated with the data stored inmemory devices 310 can be determined using error correction component308, and the assessments of the previous and current error rates can beperformed by controller 308. For example, error correction component 308can perform error correction operations on a plurality of groups of datastored in memory devices 310 (e.g., the data sensed during the senseoperation), and determine the error rate (e.g., bit error rate)associated with the error correction operation performed on eachrespective group. Controller 308 can then rank the groups of data basedon the error rate associated with each respective group. For instance,controller 308 can rank the groups in order from highest to lowest errorrate.

Controller 308 can then generate the current repair table with mappingsbased on the ranking. For example, controller 308 can determine which ofthe groups of data are among a number of groups, that is equal to thenumber of spare locations in the memory, that rank the highest (e.g.have the worst error rates) in the ranking, and map these groups to thephysical locations in the memory corresponding to the spare locations.The other groups of data can be mapped to physical locations in thememory corresponding to user-accessible locations. The mappings of thecurrent repair table can then be used for initial operations (e.g.program and/or sense operations) performed on memory devices 310.

Subsequent to generating the current repair table (e.g., duringsubsequent operation of memory devices 310), controller 308 can performa subsequent assessment of the error rates, and generate the new repairtable based on this subsequent assessment. For example, error correctioncomponent 308 can perform subsequent error correction operations on theplurality of groups of data, and determine the subsequent (e.g., new)error rate associated with the subsequent error correction operationperformed on each respective group. Controller 308 can then re-rank thegroups of data based on the subsequent error rate associated with eachrespective group (e.g., in order from highest to lowest).

For example, controller 308 can determine which of the groups of dataare among a number of groups, equal to the number of spare locations inthe memory, that rank the highest (e.g. have the worst error rates) inthe re-ranking, and then determine, for each of those respective highestranking groups, whether that group is also among the number of groupsthat was determined to rank the highest in the original ranking. Foreach of these respective highest ranking groups determined to also beamong the highest ranking groups in the original ranking (e.g., thosegroups that were originally had the worst error rates, and now stillhave the worst error rates), controller 308 can map these groups of datato the same physical locations in the memory to which they were mappedin the current repair table (e.g., these groups will remain mapped tothe spare locations in the new table). These groups can be referred toas static groups. For each of these respective highest ranking groupsthat were not also among the highest ranking groups in the originalranking (e.g., those groups that were not originally among those withthe worst error rates, but now are), controller 308 can map these groupsof data to different physical locations in the memory than the locationsthat they were mapped to in the current repair table (e.g., these groupswill now be mapped to the spare locations in the new table, instead ofto the user-accessible locations to which they were mapped in thecurrent table). These groups can be referred to as added groups.

Controller 308 can also determine, for each respective group of datathat is not among the highest ranking groups in the re-ranking, whetherthat group is among the number of groups that was determined to rankhighest in the original ranking. For each of these respective groupsthat was determined to rank highest in the original ranking (e.g., thosegroups that originally had the worst error rates, but now do not),controller 308 can map these groups of data to different physicallocations in the memory than the locations that they were mapped to inthe current repair table (e.g., these groups will now be mapped touser-accessible locations in the new table, instead of to the sparelocations to which they were mapped in the current table, as they havenow been displaced by the added groups). These groups can be referred toas deleted groups. For each of the respective groups that were notdetermined to be among the highest ranking groups in either the originalranking or the re-ranking (e.g., those groups that were never amongthose with the worst error rates), controller 308 can map these groupsto the same physical locations in the memory to which they were mappedin the current repair table (e.g., these groups will remain mapped tothe user-accessible locations in the new table).

In instances in which the spare locations in the memory all have datastored therein (e.g., are full), adding a group to the spare locationsin the memory will necessitate displacing a group from the sparelocations. However, the group to be displaced (e.g., the deleted group)can not simply be overwritten by the added group; otherwise, its datawould be lost. Rather, the group to be displaced must first be copiedout of its spare location before the added group is copied in, which canbe accomplished by utilizing the two repair tables to perform the twopasses of the data restore operation, as described herein.

Controller 308 can then perform a data restore operation on the datastored in memory devices 310 using the mappings of the current repairtable and the new repair table, as previously described herein. Once thedata restore operation has been performed, the new repair table mayassume the role of, and be referred to as the current repair table, andthe repair table that was the current repair table may become unused.The previously described operation cycle can then repeat itself, withcontroller 308 generating a newly updated mapping in the unused tablespace to serve as the “new” repair table.

For example, subsequent to performing the data restore operation,controller 308 can perform a new error rate assessment, and generate theupdated mapping to serve as the now-new repair table based on this newassessment. For example, error correction component 308 can continue toperform error correction operations on the plurality of groups of dataand determine the error rates associated with these operations.Controller 308 can then perform an additional (e.g. new) re-ranking ofthe groups of data based on these error rates, and generate the updatedmapping for the now-new repair table (e.g., to take the place of theprevious mapping of the table) based on the re-ranking, in a manneranalogous to the previous ranking and repair table generation processpreviously described herein.

Controller 308 can then perform another data restore operation using thetwo repair tables, in a manner analogous to that previously describedherein but with the roles of the tables reversed. This cycle can becontinuously performed throughout the lifetime of memory system 304,with tables 316-1 and 316-2 alternating between the current repair tableand the new repair table (e.g., alternating between being used to senseand program data) in such a manner, such that data groups (e.g., pages)with the worst error rates are continuously relegated to the spareportion of the memory.

Memory system 304 may use volatile storage for tables 316-1 and 316-2while a newly updated mapping is being generated, but only one of thetables (e.g., the current repair table) may reside in volatile storageduring intervals between data restore operations. Further, memory system304 may use non-volatile storage for tables 316-1 and 316-2. Forinstance, the system may store the new (e.g., newly generated) repairtable in non-volatile storage before commencing a data restore operationto protect against power loss, as will be further described herein.Further, metadata such as, for instance, a timestamp or monotonicallyincreasing sequence number, indicating which table represents thecurrent repair table and which table represents the new repair table maybe stored in the non-volatile storage to protect against power loss.

FIGS. 4A-4B illustrate examples of tables used to perform data restoreoperations in accordance with an embodiment of the present disclosure.For instance, table 416-1 illustrated in FIG. 4A can be an example of acurrent repair table previously described herein (e.g., in connectionwith FIG. 3), and table 416-2 illustrated in FIG. 4B can be an exampleof a new repair table previously described herein (e.g., in connectionwith FIG. 3). The examples illustrated in FIGS. 4A and 4B can bereferred to as full-resolution repair tables.

As shown in FIGS. 4A-4B, tables 416-1 and 416-2 can each include aplurality of entries (e.g., elements) 450 and 451, respectively. Eachrespective entry can correspond to a different group (e.g., a differentsector and/or parcel) of data stored in memory devices 310 previouslydescribed in connection with FIG. 3. For example, table 416-1 caninclude N entries, with entry 450-0 corresponding to a zeroth group ofdata, entry 450-1 corresponding to a first group of data, entry 450-2corresponding to a second group of data, etc., through entry 450-Ncorresponding to the Nth group of data. Similarly, table 416-2 caninclude the same number (e.g., N) of entries, with entry 451-0corresponding to a zeroth group of data, entry 451-1 corresponding to afirst group of data, entry 451-2 corresponding to a second group ofdata, etc., through entry 451-N corresponding to the Nth group of data.

As shown in FIGS. 4A and 4B, each respective entry 450 and 451 in tables416-1 and 416-2, respectively, can include a logical address and aphysical address for its respective group of data. For instance, in theexample illustrated in FIGS. 4A-4B, entries 450-0 and 451-0 both havethe same logical address (e.g., 0) and the same physical address (e.g.,0) for group zero. Continuing in the example, entries 450-1 and 451-1both have the same logical address (e.g., 1) for group 1, but havedifferent physical addresses (e.g., 1 and N−2, respectively) for group1.

As such, each respective entry 450 and 451 in tables 416-1 and 416-2,respectively, can represent a logical to physical mapping for itsrespective group of data. If the physical address for a particular groupis the same in both tables, then that group is mapped to the samephysical location by its respective entry in each table. If the physicaladdress for a particular group is different in each table, then thatgroup is mapped to different physical locations by its respective entryin each table. The logical address can be represented by the index ofthe entry, and the physical address can be represented by the content(e.g., value) of the entry.

At least one of the groups of data can include user data (e.g., datastored in a user-accessible location in the memory), and at least one ofthe groups of data can include spare data (e.g., data stored in a sparelocation in the memory). For instance, in the example illustrated inFIGS. 4A and 4B, the entries in portion 452 of tables 416-1 and 416-2can correspond to groups of user data, and the entries in portion 454 oftables 416-1 and 416-2 can correspond to groups of spare data.

For example, FIG. 4A illustrates a full-resolution repair table 416-1for an initial state of a memory. All groups in table 416-1 are identitymapped, with groups N−2, N−1, and N mapped to spare locations in thememory (e.g., these groups are assumed to have the worst error rates).Although these groups, which comprise portion 454, are placed at the endof table 416-1, embodiments of the present disclosure are not so limited(e.g., the groups corresponding to the spare locations may be placedanywhere in the table).

FIG. 4B illustrates an example of the repair table of FIG. 4A after adata restore operation in accordance with the present disclosure hasbeen performed. In this example, it has been determined that groups 1,3, and N have the worst error rates. Accordingly, the data of groups 1and 3 are now mapped (e.g., redirected) to groups N−2 and N−1 of spareportion 454 in table 416-2, while the data of group N remains identitymapped, as illustrated in FIG. 4B. Conversely, because groups N−2 andN−1 no longer have the worst error rates, the data of those groups arenow mapped to groups 1 and 3 of data portion 452 in table 416-2, asillustrated in FIG. 4B. In such a manner, the groups with the worsterror rates are always located in spare portion 454 of the table.

Subsequent data accesses (e.g., during subsequent operation of thememory) may now be filtered through table 416-2. For instance, anattempt to access the data of logical group 1 would be redirected tophysical group N−2, while an attempt to the data of logical group N−2would be redirected to physical group 1.

FIG. 5 illustrates an example of a table 516-2 used to perform datarestore operations in accordance with an embodiment of the presentdisclosure. For instance, table 516-2 illustrated in FIG. 5 can be anexample of a new repair table previously described herein (e.g., inconnection with FIG. 3). The example illustrated in FIG. 5 can bereferred to as a bitmap-based repair table.

As shown in FIG. 5, table 516-2 can include a plurality of entries(e.g., elements) 556. Each respective entry can correspond to adifferent group (e.g., a different sector and/or parcel) of data storedin memory devices 310 previously described in connection with FIG. 3, ina manner analogous to the entries of table 416-2 previously described inconnection with FIG. 4B. Further, in a manner analogous to thatpreviously described in connection with FIG. 4B, at least one of thegroups of data can include user data, and at least one of the groups ofdata can include spare data. For instance, in the example illustrated inFIG. 5, the entries in portion 558 of table 516-2 can correspond togroups of user data, and the entries in portion 560 of table 516-2 cancorrespond to groups of spare data.

As shown in FIG. 5, each respective entry in portion 560 of table 516-2can include a logical address and a physical address for its respectivegroup of data, in a manner analogous to that previously described inconnection with FIG. 4B. For instance, in the example illustrated inFIG. 5, entry 556-N−2 has a logical address of N−2 and a physicaladdress 1 for group N−2, entry 556-N−1 has a logical address of N−1 anda physical address of 3 for group N−1, and entry 556-N has a logical andphysical address of N for group N. As such, each respective entry inportion 560 of table 516-2 can represent a logical to physical mappingfor its respective group of data, which may be a redirected mapping(e.g., to a different physical location in the memory), as previouslydescribed herein.

As shown in FIG. 5, each respective entry in portion 558 of table 516-2can also include a logical address for its respective group of data.However, as illustrated in FIG. 5, instead of a physical address, eachrespective entry in this portion of the table may include a bit value(e.g., flag) indicating whether its respective group of data has beenredirected to a different physical location in the memory (e.g., to adifferent physical address than indicated by the previous table). Forinstance, data portion 558 of table 516-2 may be condensed into abitmap, with one bit per group: a zero indicating an identity mappedgroup, and a one indicating a redirected group, as illustrated in FIG.5. By condensing data portion 558 of table 516-2 into a bitmap in such amanner, the size of table 516-2 may be reduced (e.g., as compared to thesize of table 416-2).

For instance, in the example illustrated in FIG. 5, the bit values(e.g., 1) of entries 556-1 and 556-3 indicate that groups 1 and 3 havebeen redirected to different physical locations in the memory (e.g.,these groups have been redirected from the data portion of the memory tothe spare portion of the memory). For clarity, these redirections areidentical to the redirections previously described in connection withFIG. 4B.

Subsequent data accesses (e.g., during subsequent operation of thememory) may now be filtered through table 516-2, and accesses ofredirected data groups may include a search of spare portion 560 tolocate the redirected data. For example, an attempt to access the dataof logical group 3 would encounter a set (e.g., 1) bit value in thebitmap of table 516-2. This would trigger a lookup in spare portion 560for the value “3”, which would be found at group N−1, and accordinglythe access would target this physical address. In contrast, an attemptto access the data of logical group 0 would encounter a clear (e.g., 0)bit value in the bitmap, and would therefore proceed to access physicalgroup 0 with no additional lookup needed.

FIG. 6 illustrates an example of a table 662 used in operation of memoryin accordance with an embodiment of the present disclosure. Forinstance, table 662 may be used in conjunction with tables 316-1 and316-2 previously described in connection with FIG. 3, for determiningwhich of these tables should be used during program and/or senseoperations performed on the memory, such as, for instance, programand/or sense operations performed during data restore operations. Table662 may be stored, for example, in volatile memory (e.g., RAM or DRAM)external to memory devices 310 previously described in connection withFIG. 3.

Table 662 can be a bitmap whose constituent bits are each associatedwith a single group (e.g., sector) in memory devices 310. For example,as shown in FIG. 6, table 662 can include a plurality of entries (e.g.,elements) 664. Each respective entry can correspond to a different group(e.g., a different sector) of data stored in memory devices 310previously described in connection with FIG. 3, and can include a phasebit associated with that respective group, as illustrated in FIG. 6.That is, each group can have a phase bit associated therewith.

As previously described herein, tables 316-1 and 316-2 can alternatebetween being the current repair table and the new repair table (e.g.,their respective mappings can alternate between being the mapping usedfor program and sense operations). Which of these tables (e.g., whichtable's mapping) should be used when programming data to, or sensingdata stored in, a group of data can be determined based on (e.g.,indicated by) the value of that group's phase bit in table 662. Forexample, when the phase bit associated with a group is clear (e.g., 0),the first table (e.g., table 316-1) should be used when programming datato, or sensing data stored in, that group, and when the phase bitassociated with a sector is set (e.g., 1), the second table (e.g., table316-2 should be used. All phase bits in table 662 can be cleared to 0upon initialization and/or power up of the memory.

FIG. 7 illustrates a method 768 for operating memory, such as, forinstance, memory devices 310 previously described in connection withFIG. 3, in accordance with an embodiment of the present disclosure.Method 768 can be performed using, for example, controller 308previously described in connection with FIG. 3, and may be performedatomically with respect to other concurrent operations (e.g. clientaccesses) being performed on the memory.

At block 770, method 768 includes initiating a data restore (e.g.,migration) operation to be performed on a group (e.g., sector) of datastored in the memory. At block 772, method 768 includes sensing (e.g.,reading) the data stored in that group using a first one of tables 316-1and 316-2 previously described in connection with FIG. 3 (e.g. using themapping of that table). The table used to sense the data can be thetable that is presently serving as the current repair table. Thedetermination of which table to use to sense the data (e.g., which tableis the current repair table) can be made based on the value of the phasebit associated with that group of data, as previously described inconnection with FIG. 6. In an embodiment, the data may be sensed into abuffer.

At block 774, method 768 includes computing metadata using a second(e.g., the other) one of tables 316-1 and 316-2 (e.g., the table notindicated to be the current repair table by the phase bit associatedwith that group). The metadata may include, for instance, metadata spareencodings for the group of data. For example, designated spare bits inthat group's space (e.g., footprint) in the memory may be populated withreplicated data from groups previously determined to have the worsterror rates, and accordingly the data stored in the group may change dueto a changing error rate within the group (e.g., within the slices ofthe group), even if that group's data remains static. The metadata mayalso include, for example, a representation of the phase bit associatedwith the group, for use if power-loss occurs during the data restoreoperation.

At block 776, method 768 includes programming (e.g., writing) the datathat was stored in the group (e.g., the data sensed at block 772) to thememory using the second table (e.g., using the table presently servingas the new repair table). That is, the determination of which table touse to program the data (e.g., which table is the current repair table)can also be made based on the value of the phase bit associated withthat group of data, as previously described in connection with FIG. 6.

The location in the memory to which the data is programmed may be adifferent physical location in the memory, such as a location (e.g.,page) having a lower error rate than the error rate of the group fromwhich the data was sensed, as previously described herein. As such, thedata can be redirected from a group having a higher error rate to agroup having a lower error rate, as previously described herein. Atblock 778 (e.g., upon the data being programmed to the memory), method768 can include inverting the value of the phase bit associated with thegroup from which the data was sensed.

FIG. 8 illustrates a method 880 for operating memory, such as, forinstance, memory devices 310 previously described in connection withFIG. 3, in accordance with an embodiment of the present disclosure.Method 880 can be performed using, for example, controller 308previously described in connection with FIG. 3, and can be part of(e.g., provide rules for) program and/or sense operations beingperformed on a group (e.g., sector) of data stored in the memory duringdata restore operations or client accesses.

At block 882, method 880 includes initiating a program or senseoperation to be performed on a group (e.g., sector) of data stored inthe memory. Although not shown in FIG. 8, if the program or senseoperation is initiated as part of a data restore operation beingperformed on the sector, then the value of a global phase bit associatedwith the memory (e.g., a single phase bit that is associated with theentire memory) can be inverted, such that the inverted value of theglobal phase bit does not match the value of the phase bit associatedwith the sector. If the program or sense operation is not initiated aspart of a data restore operation (e.g., the operation is part of anormal client access), then the value of the global phase bit is notinverted, and accordingly matches the value of the phase bit associatedwith the sector. Accordingly, the value of the global phase bit canindicate whether a data restore operation is currently being performed.

At block 884, method 880 includes determining whether the value of thephase bit for the sector matches the value of the global phase bit. Thevalue of the phase bit associated with the sector can be provided, forinstance, by table 662 previously described in connection with FIG. 6.

If it is determined that the phase bit value for the sector matches theglobal phase bit value (e.g., indicating the program or sense operationhas been initiated as part of a client access), then the program orsense operation can be performed at block 886 using the appropriaterepair table (e.g. the mapping of that table) based on (e.g., indicatedby) the value of the phase bit for the sector, and method 880 can end atblock 888. Accordingly, for program and sense operations initiated aspart of a client access, the operation will use the repair tableindicated by the value of the sector's phase bit regardless of the valueof the global phase bit.

If it is determined that the phase bit value for the sector does notmatch the global phase bit value, then it is determined at block 890whether the operation initiated at block 882 is a program operation or asense operation. If the operation is a sense operation, then the senseoperation can be performed at block 886 using the appropriate repairtable (e.g. the mapping of that table) based on (e.g., indicated by) thevalue of the phase bit for the sector, and method 880 can end at block888. Accordingly, for sense operations initiated as part of a datarestore (e.g., migration) operation, and if the sector's phase bit doesnot match the global phase bit subsequent to the inversion of the globalphase bit, the operation will use the repair table indicated by thevalue of the sector's phase bit.

If the operation initiated at block 882 is a program operation, then thevalue of the phase bit for the sector can be inverted at block 892, andmetadata for the sector can be computed based on the inverted phase bitvalue at block 894. The metadata may include, for instance, metadataspare encodings for the sector of data, and can be computed in a manneranalogous to that previously described in connection with FIG. 7. Theprogram operation can then be performed at block 886 using theappropriate repair table (e.g. the mapping of that table) based on(e.g., indicated by) the inverted value of the phase bit for the sector,and method 880 can end at block 888. Accordingly, for program operationsinitiated as part of a data restore (e.g., migration) operation, and ifthe sector's phase bit does not match the global phase bit subsequent tothe inversion of the global phase bit, the operation will first invertthe value of the sector's phase bit, and then encode the metadata spareand perform the programming using the repair table indicated by thenow-inverted value of the sector's phase bit.

Although not shown in FIG. 8, if a power loss occurs while a datarestore operation is being performed on the memory, the present value ofthe global phase bit and the logical address for the sector of thememory on which the data restore operation has been most recentlyperformed can be rapidly stored (e.g., persisted) to non-volatile memory(e.g., the same non-volatile memory in which the repair tables arepersisted) upon detecting the occurrence of the power loss. Upon power(e.g., and the repair tables) subsequently being restored, the value ofthe phase bit associated with each respective sector of the memoryhaving a logical address less than or equal to the stored logicaladdress (e.g., less than or equal to the logical address for the sectoron which the data restore operation was most recently performed beforethe power loss) can be set to the value of the global phase bit, and thevalue of the phase bit associated with the other sectors (e.g., eachrespective sector having a logical address greater than the storedlogical address) can be set to the inverted value of the global phasebit. Accordingly, the data restore operation can resume at the sectorwhere it was when the power loss occurred.

FIG. 9 illustrates a method 995 for operating memory, such as, forinstance, memory devices 310 previously described in connection withFIG. 3, in accordance with an embodiment of the present disclosure.Method 995 can be performed using, for example, controller 308previously described in connection with FIG. 3.

Method 995 can be a method to resume a data restore operation beingperformed on the memory if a power loss occurs and no extra information(e.g., the global phase bit value and sector logical address asdescribed in connection with FIG. 8) is persisted during the power loss.For example, upon power being restored subsequent to the power loss,sequential sense operations can be performed on the groups (e.g.,sectors) of data stored in the memory (e.g., in the same sequentialorder in which the data restore operation is performed) to sequentially(e.g. one at a time) sense each respective sector using the new mappingsof the second table (e.g., using the mappings of the table presentlyserving as the new repair table). Upon one of these sense operationsfailing, a sense operation to sense that respective sector of data canbe performed using the current mappings of the first table (e.g. usingthe mappings of the table presently serving as the current repairtable), and if that sense operation is successful, that indicates thesector where the data restore operation was when the power lossoccurred, and accordingly the data restore operation can be resumed atthat sector.

For example, upon power being restored at block 911, method 995 includesperforming, at block 913, a sense operation to sense the first sector ofdata in the sequence using the mapping for that sector in the second(e.g., new) repair table, and determining, at block 915, whether thatsense operation is a success or failure. Whether the sense operation isa success or failure can be determined, for example, based on the numberof errors that occur during the sense operation and/or whether theerrors are correctable (e.g., the sense operation may fail if the numberof errors exceeds the error correction capabilities of the memory, aspreviously described herein).

If the sense operation is a success, then it is determined at block 969whether the value of the phase bit associated with the first sectormatches the value of the global phase bit. The value of the phase bitassociated with the sector can be provided, for instance, by table 662previously described in connection with FIG. 6, and the global phase bitcan be the global phase bit previously described in connection with FIG.8.

If the sense operation performed at block 913 is determined to be asuccess at block 915, and the values of the sector phase bit and theglobal phase bit are determined to match at block 969, it can be assumedthat the first sector was successfully migrated before the power lossoccurred and the sequence can move on to the next sector. For instance,at block 967 it can be determined whether there more sectors of data tosense, and if there are more sectors to sense, method 995 can move tothe next (e.g., second) sector of data in the sequence at block 999, andproceed to sense that sector using the second table at block 913. If itis determined at block 967 that there are no more sectors to sense(e.g., that the sequence has been performed on all data sectors), it canbe assumed that all the sectors have been successfully migrated, andmethod 995 can end at block 997.

If the sense operation performed at block 913 is determined to be afailure at block 915, or if the values of the sector phase bit and theglobal phase bit are determined to not match at block 969, it can beassumed that the first sector of data has not yet been successfullymigrated. Accordingly, a sense operation can be performed at block 925to sense the first sector using the mapping for that sector in the first(e.g., current) repair table, and it can be determined at block 927whether that sense operation is a success or failure.

If the sense operation performed at block 925 (e.g., using the currentrepair table) is a success, then it is determined at block 929 whetherthe value of the phase bit associated with the first sector matches thevalue of the global phase bit. If these phase bit values match, it canbe assumed that the sector at which the data restore operation was whenthe power loss occurred has been located, and accordingly the datarestore operation can be resumed at that sector (e.g. the first sector)at block 945. Further, although not shown in FIG. 9, the phase bits forall sectors in the sequence preceding that sector can be set to the setvalue (e.g., 1), and the phase bits for all succeeding sectors in thesequence can be set to the cleared value (e.g., 0).

If the sense operation performed at block 925 is determined to be afailure at block 927, or if the values of the sector phase bit and theglobal phase bit are determined to not match at block 929 (e.g., if thefirst sector can not be successfully sensed using either repair table),it can be assumed that this sector's data has been lost. Accordingly,that sector can be flagged as bad at block 965 so that it is skipped inthe sequence, and method 995 can move to the next sector in the sequence(e.g., determine whether there more sectors of data to sense at block967, move to the next sector of data in the sequence at block 999, andproceed to sense that sector using the second table at block 913).

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of a number of embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of ordinary skill in the artupon reviewing the above description. The scope of a number ofembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofa number of embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

What is claimed is:
 1. A method for operating memory, comprising:performing a data restore operation on data stored in a memory by:determining to use a first mapping to sense the data stored in thememory based on a value of a phase bit associated with the data storedin the memory; sensing the data stored in the memory using the firstmapping of the data, wherein: the first mapping is a current mapping ofthe data stored in the memory that is based on a previous assessment ofprevious error rates associated with the data; and the first mapping isstored in a first table; determining to use a second mapping to programthe sensed data to the memory based on the value of the phase bit; andprogramming the sensed data to the memory using the second mapping ofthe data, wherein: the second mapping is new mapping of the data storedin the memory that is based on a current assessment of current errorrates associated with the data; and the second mapping is stored in asecond table.
 2. The method of claim 1, wherein the method includesprogramming the sensed data to a physical location in the memory that isdifferent from a physical location in the memory from which the data issensed and has a lower error rate associated therewith than the physicallocation in the memory from which the data is sensed.
 3. The method ofclaim 1, wherein the method includes inverting the value of the phasebit upon programming the sensed data to the memory.
 4. The method ofclaim 1, wherein the method includes performing the current assessmentof the current error rates associated with the data stored in the memoryusing the sensed data.
 5. An apparatus, comprising: a memory; and acontroller configured to: perform a data restore operation on aplurality of groups of data stored in the memory using a first table anda second table stored in the controller, wherein: the first tableincludes a current mapping of the groups of data that is based on aprevious assessment of previous error rates associated with eachrespective group; and the second table includes a new mapping of thegroups of data that is based on a current assessment of current errorrates associated with each respective group; perform sequential senseoperations to sequentially sense each respective group of data using thenew mapping of the groups of data included in the second table; perform,upon the sense operation to sense one of the groups of data failing, asense operation to sense that group of data using the current mapping ofthe groups of data included in the first table; and resume the datarestore operation upon the sense operation to sense that group of datausing the current mapping in the first table succeeding.
 6. Theapparatus of claim 5, wherein: at least one of the plurality of groupsof data includes user data; and at least one of the plurality of groupsof data includes spare data.
 7. The apparatus of claim 5, wherein: thefirst table and the second table each include a plurality of entries,wherein each respective entry corresponds to a different one of theplurality of groups of data; and each respective entry includes: alogical address for its respective group of data; and a physical addressfor its respective group of data.
 8. The apparatus of claim 7, whereinthe entry in the second table corresponding to a particular one of thegroups of data includes: a same logical address as the logical addressfor that group in the entry in the first table corresponding to thatgroup; and a different physical address than the physical address forthat group in the entry in the first table corresponding to that group.9. The apparatus of claim 5, wherein: the second table includes a firstplurality of entries and a second plurality of entries, wherein eachrespective entry of the first plurality of entries and the secondplurality of entries corresponds to a different one of the plurality ofgroups of data; each respective entry of the first plurality of entriesincludes: a logical address for its respective group of data; and avalue indicating whether its respective group of data has beenredirected to a different physical location in the memory; and eachrespective entry of the second plurality of entries includes: a logicaladdress for its respective group of data; and a physical address for itsrespective group of data.
 10. The apparatus of claim 9, wherein thesecond plurality of entries correspond to groups of data that have beenredirected to different physical locations in the memory.
 11. A methodof operating memory, comprising: determining an error rate associatedwith each respective one of a plurality of groups of data stored in amemory; ranking the groups of data based on the determined error rateassociated with each respective group; generating a first table thatincludes a mapping of the groups of data that is based on the ranking;determining the error rate associated with each respective group of datasubsequent to generating the first table; re-ranking the groups of databased on the error rate associated with each respective group determinedsubsequent to generating the first table; generating a second table thatincludes a mapping of the groups of data that is based on there-ranking; performing a data restore operation on the groups of databy: sensing each respective group of data using the mapping of the firsttable; and programming the sensed data to the memory using the mappingof the second table; and inverting a value of a global phase bitassociated with the memory upon initiating the performance of the datarestore operation, such that the inverted value of the global phase bitdoes not match a value of a phase bit associated with the groups ofdata.
 12. The method of claim 11, wherein performing the data restoreoperation on the groups of data includes: determining to use the mappingof the first table to sense each respective group of data based on thevalue of the phase bit associated with the groups of data; inverting thevalue of the phase bit associated with the groups of data uponinitiating the programming of the sensed data to the memory; anddetermining to use the mapping of the second table to program the senseddata to the memory based on the inverted value of the phase bitassociated with the groups of data.
 13. The method of claim 11, whereinthe method includes: detecting a power loss while performing the datarestore operation; storing, upon detecting the power loss, the value ofthe global phase bit and a logical address for the group of data uponwhich the data restore operation has most recently been performed; andupon power being restored: setting the value of the phase bit associatedwith the groups of data having a logical address less than or equal tothe logical address for the group of data upon which the data restoreoperation has most recently been performed to the value of the globalphase bit; setting the value of the phase bit associated with the groupsof data having a logical address greater than the logical address forthe group of data upon which the data restore operation has mostrecently been performed to the inverted value of the global phase bit;and resuming the data restore operation.
 14. A method of operatingmemory, comprising: determining an error rate associated with eachrespective one of a plurality of groups of data stored in a memory;ranking the groups of data based on the determined error rate associatedwith each respective group; generating a first table that includes amapping of the groups of data that is based on the ranking; determiningthe error rate associated with each respective group of data subsequentto generating the first table; re-ranking the groups of data based onthe error rate associated with each respective group determinedsubsequent to generating the first table; generating a second table thatincludes a mapping of the groups of data that is based on there-ranking, wherein generating the second table includes: determiningwhich groups of data are among a number of groups that rank highest inthe re-ranking; determining, for each respective group of datadetermined to be among the number of groups that rank highest in there-ranking, whether that group of data is also among the number ofgroups of that rank highest in the ranking; mapping in the second table,for each respective group of data determined to not also be among thenumber of groups that rank highest in the ranking, that group of data toa physical location in the memory that is different than a physicallocation in the memory to which that group of data is mapped in thefirst table; and mapping in the second table, for each respective groupof data determined to also be among the number of groups that rankhighest in the ranking, that group of data to a physical location in thememory that is the same as the physical location in the memory to whichthat group of data is mapped in the first table; and performing a datarestore operation on the groups of data by: sensing each respectivegroup of data using the mapping of the first table; and programming thesensed data to the memory using the mapping of the second table.
 15. Themethod of claim 14, wherein generating the second table includes:determining, for each respective group of data determined to not beamong the number of groups that rank highest in the re-ranking, whetherthat group of data is among the number of groups that rank highest inthe ranking; mapping in the second table, for each respective group ofdata determined to not be among the number of groups that rank highestin the ranking, that group of data to a physical location in the memorythat is the same as the physical location in the memory to which thatgroup of data is mapped in the first table; and mapping in the secondtable, for each respective group of data determined to be among thenumber of groups that rank highest in the ranking, that group of data toa physical location in the memory that is different than the physicallocation in the memory to which that group of data is mapped in thefirst table.
 16. A method of operating memory, comprising: determiningan error rate associated with each respective one of a plurality ofgroups of data stored in a memory; ranking the groups of data based onthe determined error rate associated with each respective group;generating a first table that includes a mapping of the groups of datathat is based on the ranking; determining the error rate associated witheach respective group of data subsequent to generating the first table;re-ranking the groups of data based on the error rate associated witheach respective group determined subsequent to generating the firsttable; generating a second table that includes a mapping of the groupsof data that is based on the re-ranking; performing a data restoreoperation on the groups of data by: sensing each respective group ofdata using the mapping of the first table; and programming the senseddata to the memory using the mapping of the second table; determiningthe error rate associated with each respective group of data subsequentto performing the data restore operation; performing an additionalre-ranking of the groups of data based on the error rate associated witheach respective group determined subsequent to performing the datarestore operation; updating the mapping of the groups of data in thefirst table based on the additional re-ranking; and performing anadditional data restore operation on the groups of data by: sensing eachrespective group of data using the mapping of the second table; andprogramming the sensed data to the memory using the updated mapping ofthe first table.